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Sequential process able to room temperature bonding, and hybrid bonding of low temperature void-less bonding. |
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Surface Activated bonding by Ar Ion bombardment in ultrahigh vacuume condition. Bonding for heterologous materials, particular materials. (Ex : .compound semiconductive material,etc) |
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Achieved minute movement for specific piezo actuator.6axis piezo alignment system and IR image processing achieved submicron bonding. |
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| Appearance | |
| Size | W1400×D1000×H2300mm |
| Weight | 1500kg |
| Utility | |
| Power supply | Three-phase AC 200V 50A |
| Air Pressure | Clean Dry Air 0.5MPa |
| Ar Gas N2 Dry air | 0.2MPa |
